Surface morphology study for hexagonal GaN grown on GaAs(100) substrates by hydride vapor phase epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 11 SUPPL. B, 1996, Pages

  Kimura, Akitaka ^a   Yamaguchi, A Atsushi ^a   Sakai, Akira ^a   Sunakawa, Haruo ^a   Nido, Masaaki ^a   Usui, Akira ^a  

^a NEC CORPORATION   (Japan)

Author keywords

GaAs; GaN; Hexagonal; Hydride vapor phase epitaxy; Substrate; Surface morphology

Indexed keywords

CRYSTAL ORIENTATION; HYDRIDES; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACES; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE; HYDRIDE VAPOR PHASE EPITAXY; MISORIENTATION ANGLES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030284234     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1480     Document Type: Article

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