Cathodoluminescence of homogeneous cubic GaN/GaAs(001) layers

Semiconductor Science and Technology

Volumn 14, Issue 2, 1999, Pages 161-167

  Wang, C ^a   As, D J ^a   Schottker B ^a   Schikora, D ^a   Lischka, K ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; ELECTRON TRANSITIONS; EXCITONS; INCLUSIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE;

FULL-WIDTH AT HALF-MAXIMUM (FWHM); GALLIUM NITRIDE;

SEMICONDUCTOR GROWTH;

EID: 0033076374     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/2/010     Document Type: Article

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