An accurate method to determine the growth conditions during molecular beam epitaxy of cubic GaN

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1173-1176

  Schottker B ^a   Kuhler J ^a   As, D J ^a   Schikora, D ^a   Lischka, K ^a  

^a UNIVERSITY OF PADERBORN   (Germany)

Author keywords

GaN; MBE; RHEED

Indexed keywords

CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; INCLUSIONS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE STRUCTURE;

SEMICONDUCTING GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031648340     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1173     Document Type: Article

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