Three-dimensional simulation of inverse narrow-channel effect

Electronics Letters

Volumn 18, Issue 6, 1982, Pages 274-275

  Shigyo, N ^a   Konaka, M ^a   Dang, R L M ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Semiconductor devices and materials; Simulation

Indexed keywords

MOSFET;

TRANSISTORS, FIELD EFFECT;

EID: 0020098984     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19820187     Document Type: Article

References (3)

1. KUROSAWA, K., SHIBATA, T., and IIZUKA, H. : ‘A new bird‘s-beak free isolation technology for VLSI devices’, IEDM Tech. Dig., 1981, pp. 384-387
2. IIZUKA, T., CHIU, K. Y., and MOLL, J. L.: Double threshold MOSFETs in bird‘s-beak free structure’, Tech. Dig., 1981, pp. 380-383
3. WADA, T., and DANG, R. L. M.: to be published