Subthreshold Characteristics of Insulated-Gate Field-Effect Transistors

IEEE Transactions on Circuit Theory

Volumn 20, Issue 6, 1973, Pages 659-665

  Troutman, Ronald R ^a   Chakravarti, Satya N ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MIS - MODELING;

TRANSISTORS, FIELD EFFECT;

EID: 0015681365     PISSN: 00189324     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCT.1973.1083759     Document Type: Article

References (16)

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4. R.S.C. Cobbold, Theory and Applications of Field-Effect Transistors. New York: Wiley-Interscience, 1970, ch. 7.
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15. D.P. Kennedy, “Mathematical simulation of the effects of ionizing radiation on semiconductors,” USAF Cambridge Res. Labs., Bedford, Mass., AFCRL-71-0272, Sci. Rep. 1, 1971;also, D.P. Kennedy and P.C. Murley, “Steady state mathematical theory for the insulated gate field effect transistor,” IBM J. Res. Develop., vol. 17, pp. 2–12, 1973.
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