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Volumn 26, Issue 4, 1979, Pages 461-469

VLSI Limitations from Drain-Induced Barrier Lowering

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS;

EID: 0018455052     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1979.19449     Document Type: Article
Times cited : (230)

References (15)
  • 1
    • 0000901940 scopus 로고
    • Fundamental limitations inmicro-electronics-I. MOS technology
    • B. Hoeneisen and C. A. Mead, “Fundamental limitations inmicro-electronics-I. MOS technology Solid-State Electron., vol. 15, pp. 819–829,1972.
    • (1972) Solid-State Electron. , vol.15 , pp. 819-829
    • Hoeneisen, B.1    Mead, C.A.2
  • 2
    • 84939006019 scopus 로고
    • An investigation of punchthrough between two ungated diffusion pockets
    • Jan.
    • R. R. Troutman, “An investigation of punchthrough between two ungated diffusion pockets IBM Tech. Rep. TR 19.0224, Jan. 1972.
    • (1972) IBM Tech. Rep. TR 19.0224
    • Troutman, R.R.1
  • 6
    • 84910706415 scopus 로고
    • Steady state mathematical theory for the insulated gate field effect transistor
    • D. P. Kennedy and P. C. Murley, “Steady state mathematical theory for the insulated gate field effect transistor IBM J. Res. Develop. vol. 17, pp. 2–12, 1973.
    • (1973) IBM J. Res. Develop. , vol.17 , pp. 2-12
    • Kennedy, D.P.1    Murley, P.C.2
  • 7
    • 0001426762 scopus 로고
    • Simple model for threshold voltage in a short channel
    • Oct.
    • R. R. Troutman and A. G. Fortino, “Simple model for threshold voltage in a short channel IGFET IEEE Trans. Electron Devices, vol. ED-24, pp. 1266–1268, Oct. 1977.
    • (1977) IGFET IEEE Trans. Electron Devices , vol.ED-24 , pp. 1266-1268
    • Troutman, R.R.1    Fortino, A.G.2
  • 8
    • 0017943041 scopus 로고
    • Subthreshold conduction in MOSFET's
    • Mar.
    • G. W. Taylor, “Subthreshold conduction in MOSFET's” IEEE Trans. Electron Devices, vol. ED-25, pp. 337–350, Mar. 1978.
    • (1978) IEEE Trans. Electron Devices , vol.ED-25 , pp. 337-350
    • Taylor, G.W.1
  • 9
    • 0017943688 scopus 로고
    • Design and performance of micron-size devices
    • F. M. Klaassen, “Design and performance of micron-size devices Solid-State Electron., vol. 21, pp. 565–571,1978.
    • (1978) Solid-State Electron , vol.21 , pp. 565-571
    • Klaassen, F.M.1
  • 10
    • 0016113965 scopus 로고
    • A simple theory to predict the threshold voltage of short channel IGFET's
    • L. D. Yau, “A simple theory to predict the threshold voltage of short channel IGFET's Solid-State Electron vol. 17, pp. 1059–1063,1974.
    • (1974) Solid-State Electron , vol.17 , pp. 1059-1063
    • Yau, L.D.1
  • 11
    • 0016049539 scopus 로고
    • Subthreshold design considerations for IGFET’s
    • Apr.
    • R. R. Troutman, “Subthreshold design considerations for IGFET’s,” IEEE J. Solid-State Circuits, vol. SC-9, pp. 55–60, Apr. 1974.
    • (1974) IEEE J. Solid-State Circuits , vol.SC-9 , pp. 55-60
    • Troutman, R.R.1
  • 15
    • 0015756587 scopus 로고
    • Punchthrough currents in short channel
    • Dec
    • R. A. Stuart and W. Eccleston, “Punchthrough currents in short channel MOST. devices Electron Lett., vol. 9, pp. 586–588, Dec 1973.
    • (1973) MOST. devices Electron Lett. , vol.9 , pp. 586-588
    • Stuart, R.A.1    Eccleston, W.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.