-
1
-
-
0000901940
-
Fundamental limitations inmicro-electronics-I. MOS technology
-
B. Hoeneisen and C. A. Mead, “Fundamental limitations inmicro-electronics-I. MOS technology Solid-State Electron., vol. 15, pp. 819–829,1972.
-
(1972)
Solid-State Electron.
, vol.15
, pp. 819-829
-
-
Hoeneisen, B.1
Mead, C.A.2
-
2
-
-
84939006019
-
An investigation of punchthrough between two ungated diffusion pockets
-
Jan.
-
R. R. Troutman, “An investigation of punchthrough between two ungated diffusion pockets IBM Tech. Rep. TR 19.0224, Jan. 1972.
-
(1972)
IBM Tech. Rep. TR 19.0224
-
-
Troutman, R.R.1
-
3
-
-
0016070973
-
Drain voltage limitations of MOS transistors
-
I. M. Bateman, G. A. Armstrong, and J. A. Magowan, “Drain voltage limitations of MOS transistors Solid-State Electron., vol. 17, pp. 539–550,1974.
-
(1974)
Solid-State Electron.
, vol.17
, pp. 539-550
-
-
Bateman, I.M.1
Armstrong, G.A.2
Magowan, J.A.3
-
6
-
-
84910706415
-
Steady state mathematical theory for the insulated gate field effect transistor
-
D. P. Kennedy and P. C. Murley, “Steady state mathematical theory for the insulated gate field effect transistor IBM J. Res. Develop. vol. 17, pp. 2–12, 1973.
-
(1973)
IBM J. Res. Develop.
, vol.17
, pp. 2-12
-
-
Kennedy, D.P.1
Murley, P.C.2
-
7
-
-
0001426762
-
Simple model for threshold voltage in a short channel
-
Oct.
-
R. R. Troutman and A. G. Fortino, “Simple model for threshold voltage in a short channel IGFET IEEE Trans. Electron Devices, vol. ED-24, pp. 1266–1268, Oct. 1977.
-
(1977)
IGFET IEEE Trans. Electron Devices
, vol.ED-24
, pp. 1266-1268
-
-
Troutman, R.R.1
Fortino, A.G.2
-
8
-
-
0017943041
-
Subthreshold conduction in MOSFET's
-
Mar.
-
G. W. Taylor, “Subthreshold conduction in MOSFET's” IEEE Trans. Electron Devices, vol. ED-25, pp. 337–350, Mar. 1978.
-
(1978)
IEEE Trans. Electron Devices
, vol.ED-25
, pp. 337-350
-
-
Taylor, G.W.1
-
9
-
-
0017943688
-
Design and performance of micron-size devices
-
F. M. Klaassen, “Design and performance of micron-size devices Solid-State Electron., vol. 21, pp. 565–571,1978.
-
(1978)
Solid-State Electron
, vol.21
, pp. 565-571
-
-
Klaassen, F.M.1
-
10
-
-
0016113965
-
A simple theory to predict the threshold voltage of short channel IGFET's
-
L. D. Yau, “A simple theory to predict the threshold voltage of short channel IGFET's Solid-State Electron vol. 17, pp. 1059–1063,1974.
-
(1974)
Solid-State Electron
, vol.17
, pp. 1059-1063
-
-
Yau, L.D.1
-
11
-
-
0016049539
-
Subthreshold design considerations for IGFET’s
-
Apr.
-
R. R. Troutman, “Subthreshold design considerations for IGFET’s,” IEEE J. Solid-State Circuits, vol. SC-9, pp. 55–60, Apr. 1974.
-
(1974)
IEEE J. Solid-State Circuits
, vol.SC-9
, pp. 55-60
-
-
Troutman, R.R.1
-
13
-
-
6044234792
-
Design of micron MOS switching devices (paper 24.3)
-
R. H. Dennard, F. H. Gaensslen, L. Kuhn, and H. N. Yu, “Design of micron MOS switching devices (paper 24.3) presented at Int. Electron Devices Meeting, Washington, DC, 1972.
-
(1972)
presented at Int. Electron Devices Meeting, Washington, DC
-
-
Dennard, R.H.1
Gaensslen, F.H.2
Kuhn, L.3
Yu, H.N.4
-
14
-
-
0016116644
-
Design of ion-implanted MOSFET's with very small physical dimensions
-
Oct.
-
R. H. Dennard, F. H. Gaensslen, H. N. Yu, V. L. Rideout, E. Bassous, and A. R. LeBlanc, “Design of ion-implanted MOSFET's with very small physical dimensions,” IEEE J. Solid-State Circuits, vol. SC-9, pp. 256–268, Oct. 1974.
-
(1974)
IEEE J. Solid-State Circuits
, vol.SC-9
, pp. 256-268
-
-
Dennard, R.H.1
Gaensslen, F.H.2
Yu, H.N.3
Rideout, V.L.4
Bassous, E.5
LeBlanc, A.R.6
|