Analysis of CZT crystals and detectors grown in Russia and the Ukraine by high-pressure Bridgman methods

Journal of Electronic Materials

Volumn 28, Issue 6, 1999, Pages 688-694

  Hermon, H ^a   Schieber, M ^a   James, R B ^a   Lee, E Y ^a   Yang, N ^a   Antolak, A J ^a   Morse, D H ^a   Hackett, C ^a   Tarver, E ^a   Kolesnikov, N N P ^b   Ivanov, Yu N ^b   Komar, V ^c   Goorsky, M S ^d   Yoon, H ^d  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^c INSTITUTE FOR SINGLE CRYSTALS   (Ukraine)

^d UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; GRAIN BOUNDARIES; INFRARED RADIATION; INFRARED SPECTROSCOPY; INGOTS; LIGHT TRANSMISSION; RADIATION DETECTORS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

CADMIUM ZINC TELLURIDE; GAMMA RAY DETECTORS; INFRARED (IR) TRANSMISSION SPECTROSCOPY; LASER INDUCED TRANSIENT CHARGE TECHNIQUES (TCT); MICROPROBE ANALYSIS; PHOTON-INDUCED X RAY EMISSION (PIXE); THERMOELECTRIC EMISSION SPECTROSCOPY (TEES); TRIAXIAL DOUBLE CRYSTAL X RAY DIFFRACTION (TADXRD); VERTICAL HIGH PRESSURE BRIDGMAN (VHPB) METHOD;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0032688608     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0055-5     Document Type: Article

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