Long term instabilities in the defect assembly in irradiated high resistivity silicon detectors

IEEE Transactions on Nuclear Science

Volumn 44, Issue 3 PART 1, 1997, Pages 819-824

  Eremin, V ^a   Ivanov, A ^a   Verbitskaya, E ^a   Li, Z ^b   Schmidt, B ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

^c INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0344437327     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.603759     Document Type: Article

References (12)

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3. E. Fretwurst, H. Feick, M. Glaser, C. Goßling, E.H.M. Heijne, A. Hess, F. Lemeilleur, G. Lindstroem, K.H. Mahlmann, A. Rolf, T. Schulz and C. Soave, "Reverse annealing of the effective impurity concentration and long term operational scenario for silicon detectors in future collider experiments", Nucl. Instr. & Mem., vol. A342, pp.119, 1994.
4. Z. Li, C.J. Li, V. Eremin, and E. Verbitskaya, "Investigation on the Neff reverse annealing effect using TSC/I-DLTS: relationship between neutron induced microscopic defects and silicon detector electrical degradation," Nucl. Instr. & Meth., vol. A377, pp.265-275, (1996).
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7. M.T. Asom, J.L.Benson, R. Sauer, and L.C. Kimerling, "Interstitial defect reactions in silicon", Appl. Phys. Lett., vol. 51, pp.256-258, July 1987.
8. B. Schmidt, V. Eremin, A. Ivanov, N. Strokan, E. Verbitskaya, and Z.Li, "Relaxation of radiation damage in silicon planar detectors", J. Appl. Phys., vol. 76, pp.4072-4076, No 1, 1994.
9. V. Eremin, A. Ivanov, E. Verbitskaya, Z. Li, and H.W.Kraner, "Elevated temperature annealing of the neutron induced reverse current and the corresponding defect levels in low and high resistivity silicon detectors", IEEE Trans. Nucl. Sci., vol. NS-42, pp.387-393, August 1995.
10. Z. Li, C.J. Li, V. Eremin, and E. Verbitskaya, "Temperature stimulated abnormal annealing of neutron induced damage in high resistivity silicon detectors", preprint BNL-61687, 1995, Nucl. Instr. & Meth. A 385, pp. 321-329, Jan. 1997.
11. E. Verbitskaya, V. Eremin, A. Ivanov, and N. Strokan, "Characteristic features of the generation current in alpha-irradiated p+-n junctions made from high resistivity silicon", Semiconductors, vol. 27, pp. 115-119, Feb. 1993.
12. eff Changes in High resistivity Silicon Detectors Using TCT," BNL-62981, presented at the International Conference on Radiation Effects on Semiconductor Materials, detectors, and devices, Florence, Italy, March 6-8, 1996, to be published in Nucl. Instr. & Meth.