Leakage currents in poly-Si thin film transistors

Solid State Phenomena

Volumn 51-52, Issue , 1996, Pages 621-626

  Brotherton, S D ^a   Ayres, J R ^a   Trainer, M J ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Leakage Current; Simulation; Thin Film Transistors

Indexed keywords

EID: 17544372398     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.51-52.621     Document Type: Article

References (6)

1. S D Brotherton, J R Ayres and N D Young, Solid Sate Electronics 34, 671 (1991).
2. S D Brotherton, J R Ayres, D J McCulloch and N D Young, Physical and Technical Problems of SOI Structures and Devices, ed. by J-P Colinge, V S Lysnko and A N Nazarew (Kluwer Acadamic Publishers, NATO ARW Series, 1995), p 183.
3. J Y Seto, J. Appl. Phys. 46, 5247, (1975).
4. R E Proano, R S Misage and D G Ast, IEEE Trans. Electron. Dev. 36, 1915, (1989).
5. K Tanaka, H Arai and S Kohda, 1988 IEEE Electron Device Lett. 9 23, (1988).
6. J G Fossum, A Ortiz-Conde, H Shichijo and S K Banerjee, IEEE Trans. Electron. Dev. 32, 1378, (1985).