Optical properties of self-assembled InAs quantum dots on high-index GaAs substrates

Superlattices and Microstructures

Volumn 22, Issue 1, 1997, Pages 85-89

  Gonzalez Borrero P P ^a   Marega Jr , E ^a   Lubyshev, D I ^a   Petitprez, E ^a   Basmaji, P ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

High index; InAs; MBE; Quantum dots; Self assembled

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; SURFACES;

ORIENTATION EFFECTS; POLARITY EFFECTS; STRANSKI-KRASTANOW GROWTH METHOD;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0030677685     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1996.0370     Document Type: Article

References (11)

1. K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai, and K. Seki, IEEE Trans. Electron Devices 41, 1628 (1994).
2. U. Bockelmann and G. Bastard, Phys. Rev. B 42, 8947 (1990).
3. I. N. Stranski and Von L. Krastanow, Akad. Wiss. Lit. Mainz Math.-Natur Kl. 11b 146, 797 (1939).
4. P. Chen, Q. Xie, A. Madhukar, Li Chen, and A. Konkar, J. Vac. Sci. Technol. B 12, 2568 (1994).
5. R. Nötzel, T. Fukui, H. Hasegawa, J. Temmyo, and T. Tamamura, Appl. Phys. Lett. 65, 2854 (1994).
6. D. I. Lubyshev, P. P. González-Borrero, E. Marega, Jr, E. Petitprez, and P. Basmaji, J. Vac. Sci. Technol. B 14, 2212 (1996).
7. R. Nötzel, N. N. Ledentsov, L. Däweritz, K. H. Ploog, and M. Hohenstein, Phys. Rev. B 45, 3507 (1992).
8. R. Nötzel, L. Däweritz, and K. H. Ploog, Phys. Rev. B 46, 4736 (1992).
9. D. I. Lubyshev, P. P. González-Borrero, E. Marega, Jr, E. Petitprez, N. La Scala, Jr, and P. Basmaji, Appl. Phys. Lett. 68, 205 (1996).
10. P. P. González-Borrero, D. I. Lubyshev, E. Marega, Jr, E. Petitprez, and P. Basmaji, J. Cryst. Growth. 169 424 (1996).
11. G. Wang, S. Fafard, D. Leonard, J. E. Bowers, J. L. Merz, and P. M. Petroff, Appl. Phys. Lett. 64, 2815 (1994).