On the polarity dependence of oxide breakdown in MOS-devices with N+ and P+ polysilicon gate

European Solid-State Device Research Conference

Volumn , Issue , 1996, Pages 763-766

  Ogier, J L ^a   Degraeve, R ^a   Groeseneken, G ^a   Maes, H E ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

OXIDE BREAKDOWN; POLARITY DEPENDENCE; POLYSILICON GATES;

EID: 84920747516     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. J. C. Lee, I.-C. Chen and C. Hu, "Modeling and characterization of gate oxide reliability". IEEE Trans, on Electron Dev., Vol. 35, No. 12, pp. 2268-2277, Dec. 88.
2. K. F. Schuegraf, C. C. King and C. Hu, "Impact of Polysilicon Depletion in Thin Oxide MOS technology". Symp. on VLSI Technology, Systems and Applications, 1993, pp. 86-90.
3. C. Chang, C. Hu and R. W. Brodersen, "Quantum yield of electron impact ionization in silicon". J. Appl. Phys. 57, No. 2, 15 Jan. 1985.