Push-pull circuits using n-p-n and p-n-p InP-based HBT's for power amplification

IEEE Transactions on Microwave Theory and Techniques

Volumn 47, Issue 8, 1999, Pages 1439-1448

  Sawdai, Donald ^a   Pavlidis, Dimitris ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HETEROJUNCTION BIPOLAR TRANSISTORS; MICROWAVE AMPLIFIERS; SEMICONDUCTING INDIUM PHOSPHIDE;

PUSH PULL POWER AMPLIFIERS;

POWER AMPLIFIERS;

EID: 0032658429     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.780392     Document Type: Article

References (14)

1. D. Sawdai, J.-O. Plouchart, D. Pavlidis, A. Samelis, and K. Hong, "Power performance of InGaAs/InP single HBT's," in 8th Int. Conf. InP Related Mater., Apr. 1996, pp. 133-136.
2. C. Nguyen, T. Liu, M. Chen, and R. Virk, "Bandgap engineered InPbased power double heterojunction bipolar transistors," in 9th Int. Conf. Indium Phosphide Related Mater., 1997, pp. 15-19.
3. D. Sawdai, X. Zhang, D. Pavlidis, and P. Bhattacharya, "Power performance of PNP InAlAs/InGaAs HBT's," in 10th Int. Conf. InP Related Mater., 1998, pp. 72-75.
4. D. Sawdai, D. Pavlidis, and S. Mohammadi "Power amplification using NPN and PNP InP HBT's and application to push-pull circuits," Topical Workshop Heterostructure Microelectron. Inform. Syst. Applicat., Kanagawa, Japan, Aug. 30-Sept. 2, 1998, pp. 62-63.
5. D. Sawdai and D. Pavlidis, "Power amplification using NPN and PNP InP HBT's and application to push-pull circuits," in 22nd Workshop Compound Semiconduct. Devices Integrated Circuits (WOCSDICE), 1998, pp. 456.
6. D. Sawdai, X. Zhang, D. Pavlidis, and P. Bhattacharya, "Performance optimization of PNP InAlAs/InGaAs HBT's," in P roc. IEEE/Cornell Conf. Advanced Concepts High-Speed Semiconduct. Devices Circuits, 1997, pp. 269-277.
7. D. Hill, T. S. Kirn, and H. Q. Tserng, "X-band power AlGaAs/InGaAs p-n-p HBT's," IEEE Electron Device Lett., vol. 14, pp. 185-187, Apr. 1993.
8. P. Gray and R. Meyer, Analysis and Design of Analog Integrated Circuits, 3rd ed. New York: Wiley, 1993.
9. A. Sedra and K. Smith, Microelectronic Circuits, 3rd ed. Philadelphia, PA: Saunders, 1991.
10. J. Cowles, R. Metzger, A. Gutierrez-Aitken, A. Brown, D. Streit, A. Oki, T. Kim, and A. Doolittle, "Double heterojunction bipolar transistors with InP epitaxial layers grown by solid-souce MBE," in 9th Int. Conf. InP Related Mater., 1997, pp. 548-550.
11. D. Slater, P. Enquist, J. Hutchby, A. Morris, and R. Trew, "Pnp HBT with 66 GHz /max," IEEE Electron Device Lett., vol. 15, pp. 91-93, Mar. 1994.
12. D. Umemoto, J. Velebir, K. Kobayashi, A. Oki, and D. Streit, "Integrated npn/pnp GaAs/AlGaAs HBT's grown by selective MBE," Electron. Lett., vol. 27, pp. 1517-1518, Aug. 1991.
13. D. Hill, T. Kill, and H. Tserng, "AlGaAs/GaAs Pnp HBT with 54 GHz -Fmax and application to high-performance complementary technology," presented at the 51st Annu. Device Res. Conf., 1993, Paper IIIA-6.
14. D. Slater Jr., P. Enquist, and J. Hutchby, "Harmonic cancellation in monolithic AlGaAs/GaAs Npn/Pnp HBT push-pull pairs," in Proc. IEEE/Cornell Conf. Advanced Concepts High Speed Semiconduct. Devices Circuits, 1991, pp. 305-314.