Power performance of PNP InAlAs/InGaAs HBTs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 72-75

  Sawdai, D ^a   Zhang, X ^a   Pavlidis, D ^a   Bhattacharya, P ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; MOLECULAR BEAM EPITAXY; POWER AMPLIFIERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

POWER ADDED EFFICIENCY; SOLID SOURCE MOLECULAR BEAM EPITAXY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032303745     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)