Double heterojunction bipolar transistors with InP epitaxial layers grown by solid-source MBE

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 548-550

  Cowles, J ^a   Metzger, R A ^a   Gutierrez Aitken, A ^a   Brown, A S ^a   Streit, D ^a   Oki, A ^a   Kim, T ^a   Doolittle, A ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; MOLECULAR BEAM EPITAXY; PHOSPHORUS; SEMICONDUCTING INDIUM PHOSPHIDE;

VALVED PHOSPHORUS CRACKER;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030705018     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)