Power performance of InGaAs/InP single HBTs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 133-136

  Sawdai, D ^a   Plouchart, J O ^a   Pavlidis, D ^a   Samelis, A ^a   Hong, K ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED OPTOELECTRONICS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

CURRENT GAIN FREQUENCY; FREQUENCY POTENTIAL; OSCILLATION FREQUENCY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029697505     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)