AlGaAs/GaAs Pnp HBT with 54 GHz F max and application to high-performance complementary technology

Device Research Conference - Conference Digest, DRC

Volumn Part F146191, Issue , 1993, Pages

  Hill, D G ^a   Kim, T S ^a   Tserng, H Q ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85030078264     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.1993.1009582     Document Type: Conference Paper

References (4)

1. W. Liu et.al, Electronics Letters, vol. 26, pp. 2000-2002 (1990).
2. G. J. Sullivan et. al, IEEE Electron Device Letters, vol. 11, pp. 463-465 (1990).
3. P. M. Enquist et. al., IEEE Electron Device Letters, vol. 13, pp. 180-182 (1992).
4. C. W. Farley et. al., IEEEIEDM 1991, pp. 927-929.