Molecular beam epitaxy growth of Iny2Al1-y2As/In0.73Ga0.27As/In y1Al1-y1As/ InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 6, 1997, Pages 2021-2025

  Jiang, C ^a   Xu, B ^a   Li, H X ^a   Liu, F Q ^a   Gong, Q ^a   Zhou, W ^a   Zhu, D H ^a   Liang, J B ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

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[No Author keywords available]

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EID: 0005296746     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

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