A 6-w ka-band power module using mmic power amplifiers

IEEE Transactions on Microwave Theory and Techniques

Volumn 45, Issue 12 PART 2, 1997, Pages 2424-2430

  Ingram, Daisy L ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

Millimeter wave transmitters; Mmic power amplifiers; Mmic transmitters; Power dividers combiners

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; MILLIMETER WAVE DEVICES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER ELECTRONICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SUBSTRATES;

MILLIMETER WAVE TRANSMITTERS; POWER ADDED EFFICIENCY (PAE); POWER COMBINERS; POWER DIVIDERS;

POWER AMPLIFIERS;

EID: 0031335064     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.643855     Document Type: Article

References (13)

1. T. H. Chen, P. D. Chow, K. L. Tan, J. A. Lester, G. Zell, and M. Huang, "One watt Q-band class A pseudomorphic HEMT MMIC amplifier," in 1994 IEEE Int. Microwave Symp. Dig., vol. 2, San Diego, ÇA, Ma 1994. pp. 805-808.
2. M. V. Aust, B. Allen, G. S. Dow, R. Kasody, G. Luong, M. Biedenbender, and K. Tan, "A A'a-band HHEMT MMIC 1 watt power amplifier," in 1993 IEEE Microwave and Millimeter-Wave Monolithic Symp. Dig., Atlanta, GA, June 1993, pp. 45-48.
3. S. A. Tang, K. H. G. Duh, S. M. J. Liu, P. M. Smith, W. F. Kop, T. J. Rogers, and D. J. Pritchard, "A 560 mW 21% power-added efficiency V-band MMIC power amplifier," in 1996 IEEE GaAs 1C Symp. Dig., Orlando, FL, Nov. 1996, pp. 115-118.
4. R. Lai, M. Nishimoto, Y. Hwang, M. Biedenbender, B. Kasody, C. Geiger, Y. C. Chen, and G. Zell, "A high efficiency 0.15 //m 2-mil thick InGaAs/AlGaAs/GaAs V-band power HEMT MMIC," in 1996 IEEE GaAs 1C Symp. Dig., Orlando, FL, Nov. 1996, pp. 225-227.
5. J. M. Schellenberg, "A high-voltage A'a-band power MMIC with 41% efficiency," in 1995 IEEE GaAs 1C Symp. Dig., San Diego, CA, Nov 1995. pp. 284-287.
6. J. Lester, Y. Hwang, J. Chi, R. Lai, M. Biedenbender, and P. D. Chow, "Highly efficient compact Q-band MMIC power amplifier using 2-mil substrate and partially-matched output," in 1996 IEEE Int. Microwave Symp. Dig., vol. 1, San Francisco, CA, June 1996, pp. 153-155.
7. Y. Hwang, P. D. Chow, J. Lester, J. Chi, D. Garske, M. Bidenbender, and R. Lai, "Fully-matched high efficiency Q-band 1 watt MMIC solid state power amplifier," in 1996 IEEE Int. Microwave Symp. Dig., vol. 1, San Francisco, CA, June 1996, pp. 149-152.
8. W. Lam, M. Matloubian, A. Igawa, C. Chou, A. Kurdoghlian, C. Ngo, L. Jelloian, A. Brown, M. Thompson, and L. Larson, "44-GHz high efficiency InP HEMT MMIC power amplifier," IEEE Microwave Guided Wave Lett., vol. 4, pp. 277-278, Aug. 1994.
9. M. D. Biedenbender, J. L. Lee, K. L. Tan, P. H. Liu, A. Freudenthal, D. C. Streit, G. Luong, R. Lai, M. V. Aust, B. Allen, T. S. Lin, and H. C. Yen, "A power HEMT production process for high-efficiency A'a-band MMIC power amplifiers," in 1993 IEEE GaAs 1C Symp. Dig., San Jose, CA, Oct. 1993, pp. 341-344.
10. R. G. Frietag, "A unified analysis of MMIC power amplifier stability," in IEEE MTT-S Symp. Dig., 1992, p. 297.
11. A. K. Sharma etal, "A'a-band power PHEMT on-wafer characterization using prematched structures," in IEEE MTT-S Symp. Dig., June 1993, pp. 1343-1346.
12. J. P. Teyssier, M. Campoveccio, C. Sommet, J. Portilla, and R. Quere, "A pulsed 5-parameters measurement setup for the nonlinear characterization of FET's and bipolar power transistors," in European Microwave Conf., Madrid, Spain, 1993, pp. 489-493.
13. J. Scott, M. Sayed, P. Schmilz, and A. Parker, "Pulsed-bias, pulsed-RF device measurement system requirements," in 24th European Microwave Conf., Cannes, France, 1994, pp. 951-961.