메뉴 건너뛰기




Volumn 432, Issue 1-2, 1999, Pages 125-138

SiCl4 desorption in chlorine etching of Si (100) - A first principles study

Author keywords

Ab initio quantum chemical methods and calculations; Chemisorption; Computer simulations; Density functional calculations; Models of surface chemical reactions; Physical adsorption; Silicon tetrachloride; Solid gas interfaces

Indexed keywords

ADSORPTION; CHEMICAL BONDS; CHEMISORPTION; CHLORINE; DESORPTION; ION BOMBARDMENT; QUANTUM THEORY; RADIATION EFFECTS; REACTION KINETICS; SILICON; SILICON COMPOUNDS; SURFACE CHEMISTRY;

EID: 0032641946     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00610-X     Document Type: Article
Times cited : (5)

References (42)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.