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Volumn 392, Issue 1-3, 1997, Pages 8-16

Influence of surface defects on chlorine chemisorption on Si(100)-(2 × 1)

(4) Yang, W a Dohnalek Z a Choyke, W J a Yates Jr , J T a

a UNIVERSITY OF PITTSBURGH (United States)

Author keywords

Angle resolved DIET; Chemisorption; Chlorine; Etching; Ion bombardment; Silicon; Surface defects; Thermal desorption spectroscopy

Indexed keywords

ARGON; CHEMICAL BONDS; CHEMISORPTION; CHLORINE; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; ETCHING; ION BOMBARDMENT; SPECTROSCOPIC ANALYSIS; SURFACE PHENOMENA; SURFACE STRUCTURE; TEMPERATURE PROGRAMMED DESORPTION;

ELECTRON STIMULATED DESORPTION ION ANGULAR DISTRIBUTION (ESDIAD); THERMAL DESORPTION SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0031341940 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(97)00097-6 Document Type: Article

Times cited : (18)

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