Spectrophotometry of ion implanted silicon carbide thin films

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 116, Issue 1-4, 1996, Pages 338-341

  Laine, A D ^a   Mezzasalma, A M ^a   Rizzo, S ^a   Mondio, G ^a  

^a UNIVERSITY OF MESSINA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; BAND STRUCTURE; ELECTRONIC DENSITY OF STATES; ION IMPLANTATION; OPTICAL PROPERTIES; PERMITTIVITY; SILICON CARBIDE; SILICON ON SAPPHIRE TECHNOLOGY; STOICHIOMETRY; THIN FILMS;

GLOW DISCHARGE DECOMPOSITION; JOINT DENSITY OF STATES; OPTICAL CONSTANTS; OPTICAL GAP; OPTICAL MATRIX ELEMENTS; WINDOW LAYER;

SPECTROPHOTOMETRY;

EID: 0030218439     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(96)00128-0     Document Type: Article

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