Analysis of CIC NPT IGBT's turn-off operations for high switching current level

IEEE Transactions on Electron Devices

Volumn 46, Issue 5, 1999, Pages 1042-1049

  Lefebvre, Stéphane ^a   Miserey, Francis ^a  

^a ENSEA   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GATES (TRANSISTOR); IMPACT IONIZATION; SEMICONDUCTOR DEVICE MODELS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

BIPOLAR TRANSISTORS;

EID: 0032630961     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.760415     Document Type: Article

References (11)

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