A 2000 V non-punchthrough IGBT with high ruggedness

Solid State Electronics

Volumn 35, Issue 5, 1992, Pages 681-685

  Laska, T ^a   Miller, G ^a   Niedermeyr, J ^b  

^a SIEMENS AG   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; NONDESTRUCTIVE EXAMINATION;

ISOLATED-GATE BIPOLAR TRANSISTORS (IGBT); NON-PUNCHTHROUGH IGBT;

TRANSISTORS, BIPOLAR;

EID: 0026868079     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(92)90037-D     Document Type: Article

References (7)