An Improved Understanding for the Transient Operation of the Power Insulated Gate Bipolar Transistor (IGBT)

IEEE Transactions on Power Electronics

Volumn 5, Issue 4, 1990, Pages 459-468

  Hefner, Allen R ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; ELECTRIC WAVEFORMS; MATHEMATICAL TECHNIQUES - BOUNDARY VALUE PROBLEMS;

AMBIPOLAR DIFFUSION EQUATION; IGBT TRANSIENT MODELING; INSULATED GATE BIPOLAR TRANSISTOR (IGBT); NON-QUASI-STATIC ANALYSIS; QUASI-STATIC ANALYSIS;

TRANSISTORS, BIPOLAR;

EID: 0025497993     PISSN: 08858993     EISSN: 19410107     Source Type: Journal    
DOI: 10.1109/63.60690     Document Type: Article

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