Effect of local interconnect etch-stop layer on channel hot-electron degradation

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3212, Issue , 1997, Pages 268-274

  Cheek, Jon ^a   Nariman, H E ^a   Wristers, Dirk ^a   Nayak, Deepak ^a   Hao, Ming Yin ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

Damascene; Hot electron; Local interconnect; SiN

Indexed keywords

CIRCUIT DENSITIES; CMOS DEVICES; DAMASCENE; DAMASCENE PROCESSES; DEGRADATION MECHANISMS; DEPOSITION TECHNIQUES; ELECTRON DEGRADATIONS; EXPERIMENTAL DATUMS; GATE OXIDES; HOT-ELECTRON; HOTELECTRON DEGRADATIONS; IMPACT DEVICES; IN CHANNELS; INTERFACE STATES; LOCAL INTERCONNECT; SEMICONDUCTOR PROCESSING; SIN;

ELECTRONS; MOSFET DEVICES; PASSIVATION; SILICON NITRIDE;

DEGRADATION;

EID: 43849100491     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.284601     Document Type: Conference Paper

References (12)

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