Comparative hot carrier induced degradation in 0,25 μm MOSFETs with H or D passivated interfaces

European Solid-State Device Research Conference

Volumn , Issue , 1997, Pages 580-583

  Autran, J L ^a   Devine, R A B ^b   Warren, W L ^c   Vanheusden, K ^c  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b ORANGE LABS   (France)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES; TRANSCONDUCTANCE;

CHARGE PUMPING MEASUREMENTS; HOT-CARRIER-INDUCED DEGRADATION; INDUCED DEGRADATION; INTERFACE STATE DENSITY; MOSFETS; N-CHANNEL;

INTERFACE STATES;

EID: 84907504815     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.1997.194495     Document Type: Conference Paper

References (6)

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2. I.C. Kizilyalli, J.W. Lyding and K. Hess, IEEE Electron Device Lett., 1997, vol. 18, pp. 81-83.
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4. J.L. Autran and C. Chabrerie, Solid-State Electron., 1996, vol. 39, p. 1394-5.
5. R.A.B. Devine J.L. Autran, W.L. Warren and K. L. Vanheusden J.C. Rostaing, Appl. Phys. Lett., 1997, vol. 70, to be published.
6. R.A.B. Devine, W.L. Warren, K. Vanheusden, C. Mourrain and M.J. Bouzid, Mat. Res. Soc. Symp. Proc., 1996, to be published.