Mobility & reliability improvements of fluorinated gate oxide for VLSI technology

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 1995, Pages 44-48

  Vishnubhotla, L ^a   Balasinski, A ^a   Wang, X W ^a   Ma, T P ^a   Tseng, H H ^a   Tobin, P J ^a  

^a YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; FLUORINE; GATES (TRANSISTOR); HOT CARRIERS; INTEGRATED CIRCUIT TESTING; ION IMPLANTATION; MOSFET DEVICES; RELIABILITY; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; STRESSES; TRANSCONDUCTANCE;

CHANNEL MOBILITY; FLUORINATION; GATE OXIDES;

VLSI CIRCUITS;

EID: 0029509393     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)