Current dependence of base-collector capacitance of bipolar transistors

Solid State Electronics

Volumn 35, Issue 8, 1992, Pages 1051-1057

  Liu, William ^a   Harris, James S ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CAPACITANCE; COMPUTER SIMULATION; ELECTRIC CURRENTS; MATHEMATICAL MODELS; SEMICONDUCTOR JUNCTIONS;

BASE COLLECTOR CAPACITANCE; CRITICAL CURRENT DENSITY;

BIPOLAR TRANSISTORS;

EID: 0026910782     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(92)90004-V     Document Type: Article

References (16)

1. Bipolar transistor design for optimized power-delay logic circuits
2. The design, fabrication, and characterization of a novel electrode structure self-aligned HBT with a cutoff frequency of 45 GHz
3. Base-collector junction capacitance of bipolar transistors operating at high current densities
4. Forward-voltage capacitance and thickness of p-n junction space-charge regions
5. T) falloff at high current densities
6. Potential Distribution and Capacitance of a Graded p-n Junction
7. Effects of Space-Charge Layer Widening in Junction Transistors
8. High current regimes in transistor collector regions
9. Current gain and cutoff frequency falloff at high currents