Analytical study of collector-base capacitance and cutoff frequency of n+-p-n-n+ bipolar junction transistors

Solid State Electronics

Volumn 37, Issue 2, 1994, Pages 311-318

  Jang, Sheng Lyang ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC VARIABLES MEASUREMENT; SEMICONDUCTOR JUNCTIONS;

CARRIER VELOCITY; COLLECTOR BASE CAPACITANCE; DOPING CONCENTRATION; GUMMEL-POON MODEL; VELOCITY SATURATION;

BIPOLAR TRANSISTORS;

EID: 0028374474     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(94)90083-3     Document Type: Article

References (11)

1. Explicit analytical expressions for intrinsic base resistance and cutoff frequency of bipolar transistors biased at high injection
2. Base-collector junction capacitance of bipolar transistors operating at high current densities
3. Theoretical Analysis of Heavy Doping Effects on AlGaAs/GaAs HBT's