InP/InGaAs collector-up heterojunction bipolar transistors fabricated using Fe-ion implantation

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1995, Pages 652-655

  Yamahata, Shoji ^a   Kurishima, Kenji ^a   Kobayashi, Takashi ^a   Matsuoka, Yutaka ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; HETEROJUNCTIONS; ION IMPLANTATION; IRON; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

COLLECTOR UP HETEROJUNCTION BIPOLAR TRANSISTORS; SELF ALIGNMENT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029236247     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)