Collector-up AlGaAs/GaAs heterojunction bipolar transistors using oxidised AlAs for current confinement

Electronics Letters

Volumn 32, Issue 4, 1996, Pages 399-401

  Massengale, A ^a   Larson, M C ^a   Dai, C ^a   Harris Jr , J S ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

Aluminium gallium arsenide; Gallium arsenide; Heterojunction bipolar transistors

Indexed keywords

BERYLLIUM; ELECTRIC CURRENTS; EPITAXIAL GROWTH; FABRICATION; MOLECULAR BEAM EPITAXY; OPTICAL DEVICES; OXIDATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SUBSTRATES;

DIGITAL SWITCHING SPEEDS; MICROWAVE POWER GAIN; THRESHOLD CURRENTS; VERTICAL CAVITY SURFACE EMITTING LASERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030080933     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960261     Document Type: Article

References (9)

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