Charge-Control Analysis of Collector Transit Time for (AlGa)As/GaAs HBT’s Under a High Injection Condition

IEEE Transactions on Electron Devices

Volumn 37, Issue 10, 1990, Pages 2176-2182

  Katoh, Riichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

CARRIER DENSITY; COLLECTOR TRANSIT TIMES; KIRK EFFECT;

TRANSISTORS, BIPOLAR;

EID: 0025506091     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.59907     Document Type: Article

References (10)

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2. R. Katoh, M. Kurata, and J. Yoshida, “A self-consistent particle simulation for (AlGa) As/GaAs HBT’s with improved base-collector structures,”in IEDM Tech. Dig., pp. 248–251, 1987. ——, “Self-consistent particle simulation for (AlGa) As/GaAs HBT’s with improved base-collector structures,” IEEE Trans. Electron Devices, vol. 36, no. 5, pp. 846-853, 1989.
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7. R. G. Meyer and R. S. Muller, “Charge-control analysis of the collector-base space-charge-region contribution to bipolar-transistor time constant τT;,” IEEE Trans. Electron Devices, vol. ED-34, no. 2, pp. 450–452, 1987.
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