High-speed InP/InGaAs HBT with reduced intrinsic transit time

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1995, Pages 444-447

  Khrenov, G ^a   Kulkova, E ^a  

^a UNIVERSITY OF AIZU   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; TRANSIT TIME DEVICES;

COLLECTOR STRUCTURE; ENSEMBLE MONTE CARLO PARTICLE SIMULATOR; INTRINSIC TRANSIT TIME;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029226361     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)