Process integration technology for sub-30 ps ECL BiCMOS using heavily boron doped epitaxial contact (HYDEC)

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 441-444

  Kinoshita, Y ^a   Imai, K ^a   Yoshida, H ^a   Suzuki, H ^a   Tatsumi, T ^a   Yamazaki, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; EPITAXIAL GROWTH; GATES (TRANSISTOR); INTEGRATED CIRCUIT MANUFACTURE; MASKS; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

BIPOLAR CMOS; HEAVILY BORON DOPED EPITAXIAL CONTACT (HYDEC);

CMOS INTEGRATED CIRCUITS;

EID: 0028737553     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)