SiGe HBT technology: device and application issues

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 731-734

  Harame, D ^a   Larson, L ^a   Case, M ^a   Kovacic, S ^a   Voinigescu, S ^a   Tewksbury, T ^a   Nguyen Ngoc, D ^a   Stein, K ^a   Cressler, J ^a   Jeng, S J ^a   Malinowski, J ^a   Groves, R ^a   Eld, E ^a   Sunderland, D ^a   Rensch, D ^a   et al , ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ELECTRIC BREAKDOWN; ELECTRIC LOSSES; LINEAR INTEGRATED CIRCUITS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH;

ANALOG CIRCUITS; BASE RESISTANCE; RADIATION TOLERANCE; TRANSMISSION LINE LOSS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029536454     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)