62.8GHz fmax LP-CVD epitaxially grown silicon base bipolar transistor with extremely high early voltage of 85.7V

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1995, Pages 131-132

  Yoshino, C ^a   Inou, K ^a   Matsuda, S ^a   Nakajima, H ^a   Tsuboi, Y ^a   Naruse, H ^a   Sugaya, H ^a   Katsumata, Y ^a   Iwai, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; EPITAXIAL GROWTH; OPTIMIZATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

COLLECTOR CURRENT; DOPING CONCENTRATIONS; ELECTRICAL CHARACTERISTICS; EPITAXIAL LAYER THICKNESS;

BIPOLAR TRANSISTORS;

EID: 0029509268     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)