Very-low RF noise and high-performance (4.8 fJ) bipolar device in a 0.35 μm high-density BiCMOS SRAM technology

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1994, Pages 161-162

  Taft, R C ^a   Lin, J H ^a   Shapiro, F ^a   Bockelman, D ^a   Camilleri, N ^a  

^a APRDL ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ELECTRIC NETWORK TOPOLOGY; ELECTRIC VARIABLES MEASUREMENT; GATES (TRANSISTOR); PERFORMANCE; RANDOM ACCESS STORAGE; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE; SUBSTRATES; TECHNOLOGY;

BICMOS DEVICE; BIPOLAR DEVICE; CURRENT MODE LOGIC; DEVICE SCALABILITY; STATIC RANDOM ACCESS MEMORY;

BIPOLAR SEMICONDUCTOR DEVICES;

EID: 0028589852     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)