Nanoscale desorption of H-passivated Si(100)-2 × 1 surfaces using an ultrahigh vacuum scanning tunneling microscope

Journal of Applied Physics

Volumn 85, Issue 7, 1999, Pages 3887-3892

  Syrykh, C ^a   Nys, J P ^a   Legrand, B ^a   Stievenard, D ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DESORPTION; HYDROGEN; LITHOGRAPHY; MATHEMATICAL MODELS; PASSIVATION; SCANNING TUNNELING MICROSCOPY; THRESHOLD VOLTAGE; VACUUM TECHNOLOGY;

ELECTRON STIMULATED DESORPTION (ESD); NANOSCALE DESORPTION;

SEMICONDUCTING SILICON;

EID: 0032621467     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369760     Document Type: Article

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27. -3 nm) compared with the variable a, of the order of 0.4 nm.