Si1-xGex critical thickness for surface wave generation during UHV-CVD growth at 525°C

Materials Research Society Symposium - Proceedings

Volumn 399, Issue , 1996, Pages 413-418

  Lafontaine, H ^a   Houghton, D C ^a   Bahierathan, B ^a   Perovic, D D ^a   Baribeau, J M ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL THICKNESS; GERMANIUM FRACTION; MISFIT DISLOCATIONS; SURFACE UNDULATIONS; SURFACE WAVE GENERATION;

ATOMIC FORCE MICROSCOPY; CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); GERMANIUM; MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE PHENOMENA; SURFACE WAVES; TRANSMISSION ELECTRON MICROSCOPY;

HETEROJUNCTIONS;

EID: 0029723698     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (21)