Realization of optically active strained InAs island quantum boxes on GaAs(100) via molecular beam epitaxy and the role of island induced strain fields

Journal of Crystal Growth

Volumn 150, Issue , 1995, Pages 357-363

  Xie, Qianghua ^a   Chen, P ^a   Kalburge, A ^a   Ramachandran, T R ^a   Nayfonov, A ^a   Konkar, A ^a   Madhukar, A ^a  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EMISSION SPECTROSCOPY; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM THEORY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY; QUANTUM BOXES; STRAIN FIELDS; THREE DIMENSIONAL ISLAND;

SEMICONDUCTOR GROWTH;

EID: 0029304474     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)80235-5     Document Type: Article

References (10)

1. Mechanisms of strained island formation in molecular-beam epitaxy of InAs on GaAs(100)