Patterned growth on GaAs (311)A substrates: Engineering of growth selectivity for lateral semiconductor nanostructures

Journal of Applied Physics

Volumn 86, Issue 5, 1999, Pages 2896-2900

  Fricke, Jörg ^a,b   Nötzel, Richard ^a   Jahn, Uwe ^a   Niu, Zhichuan ^a,c   Schönherr, Hans Peter ^a   Ramsteiner, Manfred ^a   Ploog, Klaus H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

GROWTH SELECTIVITY SUPERPOSITION;

NANOSTRUCTURED MATERIALS;

EID: 0032615018     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371138     Document Type: Article

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