SCOPUS 정보 검색 플랫폼

Volumn 171, Issue 3-4, 1997, Pages 341-348

Fabrication of highly uniform AlGaAs/GaAs quantum wire superlattices by flow rate modulation epitaxy on V-grooved substrates

(3) Wang, Xue Lun a Ogura, Mutsuo a Matsuhata, Hirofumi a

a ELECTROTECHNICAL LABORATORY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

FLOW RATE MODULATION EPITAXY; GROWTH PROFILE; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE PEAK; QUANTUM WIRE SUPERLATTICES; V GROOVED SUBSTRATES;

SEMICONDUCTOR SUPERLATTICES;

EID: 0031077543 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00689-6 Document Type: Article

Times cited : (33)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.