Effect of mis-orientation of mesa-stripes on the growth of InGaAs quantum wires by selective molecular beam epitaxy

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 695-699

  Kihara, Michio ^a   Fujikura, Hajime ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Dot structure; InGaAs InAlAs; Misoriented mesa stripe; Quantum wire; Selective MBE growth

Indexed keywords

ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; MOLECULAR BEAM EPITAXY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0031548393     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80166-3     Document Type: Article

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