Patterned growth on GaAs (311)A substrates: Dependence on mesa misalignment and sidewall slope and its application to coupled wire-dot arrays

Journal of Applied Physics

Volumn 85, Issue 7, 1999, Pages 3576-3581

  Fricke, Jörg ^a   Nötzel, Richard ^a   Jahn, Uwe ^a   Schönherr, Hans Peter ^a   Däweritz, Lutz ^a   Ploog, Klaus H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SUBSTRATES;

CATHODOLUMINESCENCE SPECTROSCOPY; COUPLED WIRE-DOT ARRAYS; CROSS-SECTIONAL ELECTRON MICROSCOPY; FAST-GROWING SIDEWALLS; WET CHEMICAL ETCHING;

HETEROJUNCTIONS;

EID: 0344771185     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369717     Document Type: Article

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