Self-limiting MBE growth and characterization of three-dimensionally confined nanostructures on patterned GaAs (311)a substrates

Journal of Electronic Materials

Volumn 28, Issue 1, 1999, Pages 1-5

  Niu, Zhichuan ^a,b   Nötzel, Richard ^a   Jahn, Uwe ^a   Schönherr, Hans Peter ^a   Fricke, Jörg ^a   Ploog, Klaus H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

High index substrates; Molecular beam epitaxy (MBE); Patterned growth; Three dimensionally confined nanostructures

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPIC ANALYSIS; SURFACE ROUGHNESS;

THREE-DIMENSIONALLY CONFINED NANOSTRUCTURES;

NANOSTRUCTURED MATERIALS;

EID: 0032762070     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0186-8     Document Type: Article

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