Effect of growth temperature on the microstructure of MOVPE AlN/Si(111)

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 185-190

  Zhou, Mei ^a   Perkins, N R ^a   Rehder, E ^a   Kuech, T F ^a   Babcock, S E ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; FILM GROWTH; HIGH TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM NITRIDE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0031370250     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-185     Document Type: Conference Paper

References (9)