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Applied Physics Letters

Volumn 75, Issue 11, 1999, Pages 1512-1514

Self-aligned current confinement structure using AlAs/InP tunnel junction in GaInAsP/InP semiconductor lasers

(5) Sekiguchi, Shigeaki a Miyamoto, Tomoyuki a Kimura, Tadayoshi a Koyama, Fumio a Iga, Kenichi a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; TUNNEL JUNCTIONS;

ALUMINUM ARSENIDE; SELF ALIGNED CURRENT CONFINEMENT;

SEMICONDUCTOR LASERS;

EID: 0032613950 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.124739 Document Type: Article

Times cited : (8)

References (10)

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2
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5
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7
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8
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