Topographic and electronic studies of wedge-shape surface defects on AiGaAs/GaAs films grown on ge substrates

Applied Physics Letters

Volumn 75, Issue 14, 1999, Pages 2111-2113

  Xu, Q ^a   Hsu, J W P ^a   Carlin, J A ^b   Sieg, R M ^b   Boeckl, J J ^b   Ringel, S A ^b  

^a University of Virginia   (United States)

^b The Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; CRYSTAL DEFECTS; ELECTROSTATICS; FERMI LEVEL; MICROSCOPIC EXAMINATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SURFACE TOPOGRAPHY;

ALUMINUM GALLIUM ARSENIDE; ELECTROSTATIC FORCE MICROSCOPY; SCANNING FORCE MICROSCOPY; SURFACE POTENTIAL;

HETEROJUNCTIONS;

EID: 0032606863     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124933     Document Type: Article

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