Characterization of wafer bonded photodetectors fabricated using various annealing temperatures and ambients

Applied Physics Letters

Volumn 71, Issue 11, 1997, Pages 1507-1509

  Levine, B F ^a   Hawkins, A R ^a,b   Hiu, S ^a   Tseng, B J ^a   Reilley, J P ^a,b   King, C A ^a   Gruezke, L A ^a   Johnson, R W ^a   Zolnowski, D R ^a   Bowers, J E ^a,b  

^a LUCENT TECHNOLOGIES   (United States)

^b Santa Barbara   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRON DEVICE MANUFACTURE; ETCHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; VOLTAGE MEASUREMENT;

FORWARD CURRENT VOLTAGE MEASUREMENT; LIGHTWAVE ANALYZER; LOW PRESSURE METALLORGANIC CHEMICAL VAPOR DEPOSITION;

PHOTODETECTORS;

EID: 0031572096     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119950     Document Type: Article

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