Atomic layer epitaxy of tungsten oxide films using oxyfluorides as metal precursors

Journal of the Electrochemical Society

Volumn 146, Issue 8, 1999, Pages 3139-3143

  Tagtstrom P ^a   Martensson P ^a   Jansson, U ^a   Carlsson, J O ^a  

^a UPPSALA UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ATOMS; DEPOSITION; EPITAXIAL GROWTH; ETCHING; HYDROGEN INORGANIC COMPOUNDS; OXIDES; SURFACES; TEMPERATURE; TUNGSTEN COMPOUNDS;

ATOMIC LAYER EPITAXY; METAL PRECURSORS; OXYFLUORIDES; TUNGSTEN OXIDE FILMS;

THIN FILMS;

EID: 0032592370     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1392445     Document Type: Article

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